FamilyPackageCircuitVBRDSS (V)RDS(on) Max 4.5V (mOhms)RDS(on) Max 10V (mOhms)ID @ TC = 25C (A)ID @ TA = 25C (A)ID @ TA = 70C (A)Qg Typ (nC)Rth(JC) (K/W)Power Dissipation @ TA = 25C (W)Schottky VF (V)@ IFPbFPackage Class Can1K Budgetary Pricing (USD)HEXFET Power MOSFETs Discrete N-ChannelTO-262Discrete100RDS(on) Max 2.7V (mOhms) 18.059ID @ TC = 100C (A) 82.0Qgd Typ (nC)0.92 Part StatusPbF Option AvailableThru-Hole0.988
IRF3710ZL |
RFQ for IRF3710ZL |
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| Technical/Catalog Information | IRF3710ZLPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 59A |
| Rds On (Max) @ Id, Vgs | 18 mOhm @ 35A, 10V |
| Input Capacitance (Ciss) @ Vds | 2900pF @ 25V |
| Power - Max | 160W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 120nC @ 10V |
| Package / Case | TO-262-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF3710ZLPBF IRF3710ZLPBF |
| Product | Manufacturers | Pack | D/C | |||||||||||||||||
| IRF3710ZL | - | TO-262 | `06+(pb-free) |
|
Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
59 |
A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
42 | |
| ID | Pulsed Drain Current |
240 | |
| PD @TC = 25°C | Power Dissipation |
160 |
W |
| Linear Derating Factor |
1.1 |
W/°C | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS | Single Pulse Avalanche Energy (Thermally Limited) |
170 |
mJ |
| EAS (tested) | Single Pulse Avalanche Energy Tested Value |
200 | |
| IAR | Avalanche Current |
See Fig.12a,12b,15,16 |
A |
| EAR | Repetitive Avalanche Energy |
mJ | |
|
TJ |
Operating Junction and Storage Temperature Range |
SupplierPost a Buying Lead |